Samsung announces UFS 4.0 storage, promises better performance and power efficiency

samsung semiconductor, a unit of Samsung Electronicshas announced integrated flash storage (UFS) 4.0, upgrade to the one currently in use UFS 3.0 either UFS 3.1 storage technology. Samsung’s UFS 4.0 The storage is based on the company’s Gen 7 V-NAND memory technology.
Samsung’s UFS 4.0 storage includes a proprietary controller with sequential read and write speeds of up to 4,200 MB/s and 2,800 MB/s, respectively. In layman’s terms, UFS 4.0 has twice the speed of UFS 3.1, meaning your next smartphone will work much faster and easier. For reference, UFS 3.1 has a sequential read speed of 2,100 MB/s and a sequential read speed of 1,200 MB/s. Furthermore, according to Samsung, UFS 4.0 offers speeds of up to 2.23 Gb/s per lane.
Not only this, Samsung’s newly developed storage technology also improves power consumption. UFS 4.0 provides a 46% improvement in power efficiency. Samsung claims that UFS 4.0 will deliver sequential read speeds of 6.0MBps per milliamp. Hence, users can expect better performance and better battery life on devices using UFS 4.0 storage.
UFS 4.0 storage technology is expected to come in the upcoming Samsung Galaxy Z Fold 4 and Galaxy Z Flip 4. Apart from this, next year’s Galaxy S series smartphone may also come with UFS 4.0 storage. In addition to smartphones, UFS 4.0 will be used in the automotive industry as well as AR/VR devices in the future.

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